Total Ionizing Dose Effect in LDMOS Oxides and Devices

Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with $^{60}$Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-res...

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Detalles Bibliográficos
Autores principales: Borel, T, Furic, S, Leduc, E, Michez, A, Boch, J, Touboul, A, Azais, B, Danzeca, S, Dusseau, L
Lenguaje:eng
Publicado: 2019
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1109/TNS.2019.2914091
http://cds.cern.ch/record/2689000
Descripción
Sumario:Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with $^{60}$Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-resistance. In this paper, degradation mechanisms at play are investigated through TCAD simulation, and an explanation of the physical mechanisms for the observed degradation is proposed.

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