Total Ionizing Dose Effect in LDMOS Oxides and Devices

Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with $^{60}$Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-res...

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Detalles Bibliográficos
Autores principales: Borel, T, Furic, S, Leduc, E, Michez, A, Boch, J, Touboul, A, Azais, B, Danzeca, S, Dusseau, L
Lenguaje:eng
Publicado: 2019
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1109/TNS.2019.2914091
http://cds.cern.ch/record/2689000
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author Borel, T
Furic, S
Leduc, E
Michez, A
Boch, J
Touboul, A
Azais, B
Danzeca, S
Dusseau, L
author_facet Borel, T
Furic, S
Leduc, E
Michez, A
Boch, J
Touboul, A
Azais, B
Danzeca, S
Dusseau, L
author_sort Borel, T
collection CERN
description Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with $^{60}$Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-resistance. In this paper, degradation mechanisms at play are investigated through TCAD simulation, and an explanation of the physical mechanisms for the observed degradation is proposed.
id oai-inspirehep.net-1750221
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
record_format invenio
spelling oai-inspirehep.net-17502212019-10-07T08:32:10Zdoi:10.1109/TNS.2019.2914091http://cds.cern.ch/record/2689000engBorel, TFuric, SLeduc, EMichez, ABoch, JTouboul, AAzais, BDanzeca, SDusseau, LTotal Ionizing Dose Effect in LDMOS Oxides and DevicesAccelerators and Storage RingsLaterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with $^{60}$Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-resistance. In this paper, degradation mechanisms at play are investigated through TCAD simulation, and an explanation of the physical mechanisms for the observed degradation is proposed.oai:inspirehep.net:17502212019
spellingShingle Accelerators and Storage Rings
Borel, T
Furic, S
Leduc, E
Michez, A
Boch, J
Touboul, A
Azais, B
Danzeca, S
Dusseau, L
Total Ionizing Dose Effect in LDMOS Oxides and Devices
title Total Ionizing Dose Effect in LDMOS Oxides and Devices
title_full Total Ionizing Dose Effect in LDMOS Oxides and Devices
title_fullStr Total Ionizing Dose Effect in LDMOS Oxides and Devices
title_full_unstemmed Total Ionizing Dose Effect in LDMOS Oxides and Devices
title_short Total Ionizing Dose Effect in LDMOS Oxides and Devices
title_sort total ionizing dose effect in ldmos oxides and devices
topic Accelerators and Storage Rings
url https://dx.doi.org/10.1109/TNS.2019.2914091
http://cds.cern.ch/record/2689000
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AT bochj totalionizingdoseeffectinldmosoxidesanddevices
AT touboula totalionizingdoseeffectinldmosoxidesanddevices
AT azaisb totalionizingdoseeffectinldmosoxidesanddevices
AT danzecas totalionizingdoseeffectinldmosoxidesanddevices
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