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Total Ionizing Dose Effect in LDMOS Oxides and Devices
Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with $^{60}$Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-res...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2019
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2019.2914091 http://cds.cern.ch/record/2689000 |