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Radiation damage modeling: TCAD simulation
The exceptional performance of the silicon sensors in the radiation environment has led to their extensive application in high energy physics. Even so, the future experiments foresee these sensors to be exposed to higher radiation levels. Radiation induces a change in the macroscopic properties of t...
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| Lenguaje: | eng |
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SISSA
2019
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| Acceso en línea: | https://dx.doi.org/10.22323/1.348.0017 http://cds.cern.ch/record/2697098 |