Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will requi...

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Detalles Bibliográficos
Autores principales: Zhang, Chun-Min, Jazaeri, Farzan, Borghello, Giulio, Mattiazzo, Serena, Baschirotto, Andrea, Enz, Christian
Lenguaje:eng
Publicado: 2019
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/NSSMIC.2018.8824379
http://cds.cern.ch/record/2706952
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author Zhang, Chun-Min
Jazaeri, Farzan
Borghello, Giulio
Mattiazzo, Serena
Baschirotto, Andrea
Enz, Christian
author_facet Zhang, Chun-Min
Jazaeri, Farzan
Borghello, Giulio
Mattiazzo, Serena
Baschirotto, Andrea
Enz, Christian
author_sort Zhang, Chun-Min
collection CERN
description This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.
id oai-inspirehep.net-1757618
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
record_format invenio
spelling oai-inspirehep.net-17576182020-01-22T23:55:35Zdoi:10.1109/NSSMIC.2018.8824379http://cds.cern.ch/record/2706952engZhang, Chun-MinJazaeri, FarzanBorghello, GiulioMattiazzo, SerenaBaschirotto, AndreaEnz, ChristianBias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETsDetectors and Experimental TechniquesThis paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.oai:inspirehep.net:17576182019
spellingShingle Detectors and Experimental Techniques
Zhang, Chun-Min
Jazaeri, Farzan
Borghello, Giulio
Mattiazzo, Serena
Baschirotto, Andrea
Enz, Christian
Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
title Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
title_full Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
title_fullStr Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
title_full_unstemmed Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
title_short Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
title_sort bias dependence of total ionizing dose effects on 28-nm bulk mosfets
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/NSSMIC.2018.8824379
http://cds.cern.ch/record/2706952
work_keys_str_mv AT zhangchunmin biasdependenceoftotalionizingdoseeffectson28nmbulkmosfets
AT jazaerifarzan biasdependenceoftotalionizingdoseeffectson28nmbulkmosfets
AT borghellogiulio biasdependenceoftotalionizingdoseeffectson28nmbulkmosfets
AT mattiazzoserena biasdependenceoftotalionizingdoseeffectson28nmbulkmosfets
AT baschirottoandrea biasdependenceoftotalionizingdoseeffectson28nmbulkmosfets
AT enzchristian biasdependenceoftotalionizingdoseeffectson28nmbulkmosfets

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