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Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will requi...

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Detalles Bibliográficos
Autores principales:	Zhang, Chun-Min, Jazaeri, Farzan, Borghello, Giulio, Mattiazzo, Serena, Baschirotto, Andrea, Enz, Christian
Lenguaje:	eng
Publicado:	2019
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/NSSMIC.2018.8824379 http://cds.cern.ch/record/2706952

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