A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology

The design and characterization results of a high-resolution phase-shifter are presented. The phase-shifter is designed with radiation hardening techniques and fabricated in 65 nm CMOS technology. The phase-shifter circuit can produce several output frequencies (40, 80, 160, 320, 640 or 1280 MHz) wi...

Descripción completa

Detalles Bibliográficos
Autores principales: Kulis, Szymon, Yang, Dongxu, Ghong, Datao, Fonseca, Jose, Biereigel, Stefan, Ye, Jingbo, Moreira, Paulo
Lenguaje:eng
Publicado: IEEE 2019
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.23919/MIXDES.2019.8787202
http://cds.cern.ch/record/2729050
Descripción
Sumario:The design and characterization results of a high-resolution phase-shifter are presented. The phase-shifter is designed with radiation hardening techniques and fabricated in 65 nm CMOS technology. The phase-shifter circuit can produce several output frequencies (40, 80, 160, 320, 640 or 1280 MHz) with an adjustable phase (48.4 ps resolution). It has been fully characterized displaying INL<0.61 LSB and DNL<0.44 LSB with the power consumption, depending on the output frequency, staying below 8 μW/MHz.

Ejemplares similares