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A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology
The design and characterization results of a high-resolution phase-shifter are presented. The phase-shifter is designed with radiation hardening techniques and fabricated in 65 nm CMOS technology. The phase-shifter circuit can produce several output frequencies (40, 80, 160, 320, 640 or 1280 MHz) wi...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.23919/MIXDES.2019.8787202 http://cds.cern.ch/record/2729050 |
| _version_ | 1780966442238214144 |
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| author | Kulis, Szymon Yang, Dongxu Ghong, Datao Fonseca, Jose Biereigel, Stefan Ye, Jingbo Moreira, Paulo |
| author_facet | Kulis, Szymon Yang, Dongxu Ghong, Datao Fonseca, Jose Biereigel, Stefan Ye, Jingbo Moreira, Paulo |
| author_sort | Kulis, Szymon |
| collection | CERN |
| description | The design and characterization results of a high-resolution phase-shifter are presented. The phase-shifter is designed with radiation hardening techniques and fabricated in 65 nm CMOS technology. The phase-shifter circuit can produce several output frequencies (40, 80, 160, 320, 640 or 1280 MHz) with an adjustable phase (48.4 ps resolution). It has been fully characterized displaying INL<0.61 LSB and DNL<0.44 LSB with the power consumption, depending on the output frequency, staying below 8 μW/MHz. |
| id | oai-inspirehep.net-1767026 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2019 |
| publisher | IEEE |
| record_format | invenio |
| spelling | oai-inspirehep.net-17670262020-08-31T14:20:43Zdoi:10.23919/MIXDES.2019.8787202http://cds.cern.ch/record/2729050engKulis, SzymonYang, DongxuGhong, DataoFonseca, JoseBiereigel, StefanYe, JingboMoreira, PauloA High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS TechnologyDetectors and Experimental TechniquesThe design and characterization results of a high-resolution phase-shifter are presented. The phase-shifter is designed with radiation hardening techniques and fabricated in 65 nm CMOS technology. The phase-shifter circuit can produce several output frequencies (40, 80, 160, 320, 640 or 1280 MHz) with an adjustable phase (48.4 ps resolution). It has been fully characterized displaying INL<0.61 LSB and DNL<0.44 LSB with the power consumption, depending on the output frequency, staying below 8 μW/MHz.IEEEoai:inspirehep.net:17670262019 |
| spellingShingle | Detectors and Experimental Techniques Kulis, Szymon Yang, Dongxu Ghong, Datao Fonseca, Jose Biereigel, Stefan Ye, Jingbo Moreira, Paulo A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology |
| title | A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology |
| title_full | A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology |
| title_fullStr | A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology |
| title_full_unstemmed | A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology |
| title_short | A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology |
| title_sort | high-resolution, wide-range, radiation-hard clock phase-shifter in a 65 nm cmos technology |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.23919/MIXDES.2019.8787202 http://cds.cern.ch/record/2729050 |
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