R&D; for new silicon pixel sensors for the High Luminosity phase of the CMS experiment at LHC

The High Luminosity upgrade of the CERN LHC collider (HL-LHC) demands a new high-radiation–tolerant solid-state pixel sensor capable of surviving fluencies up to a few 10$^{16} n_{eq}/\mathrm{cm}^2$ at ∼ 3 cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler (FBK), is aiming at the development of thin $n$-in-$p$–type pixel sensors for the HL-LHC. The R&D; covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100 μm and 130 μm active thickness for planar sensors, and 130 μm for 3D sensors, the thinnest ones ever produced so far. The first prototypes of hybrid modules, bump-bonded to the present CMS readout chip, have been tested on beam. The first results on their performance before and after irradiation are presented