High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique

The Two Photon Absorption Transient Current Technique (TPA-TCT) is a tool to characterize semiconductor detectors using a spatially confined laser probe. Excess charge carriers are produced by the simultaneous absorption of two sub-bandgap photons in the material. The current induced by the motion o...

Descripción completa

Detalles Bibliográficos
Autores principales: García, Marcos Fernández, Echeverría, Richard Jaramillo, Moll, Michael, Santos, Raúl Montero, Palomo Pinto, Rogelio, Vila, Iván, Wiehe, Moritz
Lenguaje:eng
Publicado: Elsevier 2020
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2019.162865
http://cds.cern.ch/record/2712927

Internet

https://dx.doi.org/10.1016/j.nima.2019.162865
http://cds.cern.ch/record/2712927

Ejemplares similares