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High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique

The Two Photon Absorption Transient Current Technique (TPA-TCT) is a tool to characterize semiconductor detectors using a spatially confined laser probe. Excess charge carriers are produced by the simultaneous absorption of two sub-bandgap photons in the material. The current induced by the motion o...

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Detalles Bibliográficos
Autores principales:	García, Marcos Fernández, Echeverría, Richard Jaramillo, Moll, Michael, Santos, Raúl Montero, Palomo Pinto, Rogelio, Vila, Iván, Wiehe, Moritz
Lenguaje:	eng
Publicado:	Elsevier 2020
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1016/j.nima.2019.162865 http://cds.cern.ch/record/2712927

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