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Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR

This contribution describes the design of a semi-custom serialiser in 180nm CMOS technology. The design is verified for SEU immunity and BER with 30MeV protons.

Detalles Bibliográficos
Autores principales: Lupi, Matteo, Rinella, G Aglieri, Bonora, M, Hillemanns, H, Kim, D, Kugathasan, T, Lattuca, A, Mazza, G, Sielewicz, K M, Snoeys, W
Lenguaje:eng
Publicado: 2017
Acceso en línea:https://dx.doi.org/10.1109/RADECS.2017.8696110
http://cds.cern.ch/record/2713617
Descripción
Sumario:This contribution describes the design of a semi-custom serialiser in 180nm CMOS technology. The design is verified for SEU immunity and BER with 30MeV protons.