Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR

This contribution describes the design of a semi-custom serialiser in 180nm CMOS technology. The design is verified for SEU immunity and BER with 30MeV protons.

Detalles Bibliográficos
Autores principales: Lupi, Matteo, Rinella, G Aglieri, Bonora, M, Hillemanns, H, Kim, D, Kugathasan, T, Lattuca, A, Mazza, G, Sielewicz, K M, Snoeys, W
Lenguaje:eng
Publicado: 2017
Acceso en línea:https://dx.doi.org/10.1109/RADECS.2017.8696110
http://cds.cern.ch/record/2713617
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author Lupi, Matteo
Rinella, G Aglieri
Bonora, M
Hillemanns, H
Kim, D
Kugathasan, T
Lattuca, A
Mazza, G
Sielewicz, K M
Snoeys, W
author_facet Lupi, Matteo
Rinella, G Aglieri
Bonora, M
Hillemanns, H
Kim, D
Kugathasan, T
Lattuca, A
Mazza, G
Sielewicz, K M
Snoeys, W
author_sort Lupi, Matteo
collection CERN
description This contribution describes the design of a semi-custom serialiser in 180nm CMOS technology. The design is verified for SEU immunity and BER with 30MeV protons.
id oai-inspirehep.net-1783497
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
record_format invenio
spelling oai-inspirehep.net-17834972020-03-24T21:02:10Zdoi:10.1109/RADECS.2017.8696110http://cds.cern.ch/record/2713617engLupi, MatteoRinella, G AglieriBonora, MHillemanns, HKim, DKugathasan, TLattuca, AMazza, GSielewicz, K MSnoeys, WDesign and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMRThis contribution describes the design of a semi-custom serialiser in 180nm CMOS technology. The design is verified for SEU immunity and BER with 30MeV protons.oai:inspirehep.net:17834972017
spellingShingle Lupi, Matteo
Rinella, G Aglieri
Bonora, M
Hillemanns, H
Kim, D
Kugathasan, T
Lattuca, A
Mazza, G
Sielewicz, K M
Snoeys, W
Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR
title Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR
title_full Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR
title_fullStr Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR
title_full_unstemmed Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR
title_short Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR
title_sort design and test with proton beam of a 1.2 gb/s semi-custom serialiser implemented in 180 nm cmos with seu mitigation by tmr
url https://dx.doi.org/10.1109/RADECS.2017.8696110
http://cds.cern.ch/record/2713617
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