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Development of CMOS sensors for electron microscopy
In this work, we show the design and preliminary characterization of an image sensor with 64x64 pixels and its associated hardware and software needed to use the chip. The aim of the chip is to be used as a sensor for TEM electron microscopy. First measurements were done using X-Rays to characterize...
Autores principales: | , , , |
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Lenguaje: | eng |
Publicado: |
2019
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/14/12/c12002 http://cds.cern.ch/record/2713623 |
_version_ | 1780965401243418624 |
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author | Mateos, H Ferretti, A Mele, L Perić, I |
author_facet | Mateos, H Ferretti, A Mele, L Perić, I |
author_sort | Mateos, H |
collection | CERN |
description | In this work, we show the design and preliminary characterization of an image sensor with 64x64 pixels and its associated hardware and software needed to use the chip. The aim of the chip is to be used as a sensor for TEM electron microscopy. First measurements were done using X-Rays to characterize the chip and to test the whole system (ASIC, Software, and Hardware). The chip was tested with electrons inside an Electron Microscope at Thermo Fisher and it’s functioning was checked. The chip was able to stand 50 Mrad of X-Ray and 3.6 Mrad of electrons total dose without decreasing considerably the performance. |
id | oai-inspirehep.net-1785113 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2019 |
record_format | invenio |
spelling | oai-inspirehep.net-17851132020-03-26T14:05:55Zdoi:10.1088/1748-0221/14/12/c12002http://cds.cern.ch/record/2713623engMateos, HFerretti, AMele, LPerić, IDevelopment of CMOS sensors for electron microscopyDetectors and Experimental TechniquesIn this work, we show the design and preliminary characterization of an image sensor with 64x64 pixels and its associated hardware and software needed to use the chip. The aim of the chip is to be used as a sensor for TEM electron microscopy. First measurements were done using X-Rays to characterize the chip and to test the whole system (ASIC, Software, and Hardware). The chip was tested with electrons inside an Electron Microscope at Thermo Fisher and it’s functioning was checked. The chip was able to stand 50 Mrad of X-Ray and 3.6 Mrad of electrons total dose without decreasing considerably the performance.oai:inspirehep.net:17851132019 |
spellingShingle | Detectors and Experimental Techniques Mateos, H Ferretti, A Mele, L Perić, I Development of CMOS sensors for electron microscopy |
title | Development of CMOS sensors for electron microscopy |
title_full | Development of CMOS sensors for electron microscopy |
title_fullStr | Development of CMOS sensors for electron microscopy |
title_full_unstemmed | Development of CMOS sensors for electron microscopy |
title_short | Development of CMOS sensors for electron microscopy |
title_sort | development of cmos sensors for electron microscopy |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1088/1748-0221/14/12/c12002 http://cds.cern.ch/record/2713623 |
work_keys_str_mv | AT mateosh developmentofcmossensorsforelectronmicroscopy AT ferrettia developmentofcmossensorsforelectronmicroscopy AT melel developmentofcmossensorsforelectronmicroscopy AT perici developmentofcmossensorsforelectronmicroscopy |