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Increased radiation tolerance of CMOS sensors with small collection electrodes through accelerated charge collection

Mini-MALTA is a Monolithic Active Pixel Sensor prototype developed in the TowerJazz 180 nm CMOS imaging process, with a small collection electrode design (3μm$^2$ ), and a small pixel size (36.4 μm), on high resistivity substrates and large voltage bias. It targets the outermost layer of the ATLAS I...

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Autor principal: Dao, Valerio
Lenguaje:eng
Publicado: SISSA 2020
Materias:
Acceso en línea:https://dx.doi.org/10.22323/1.370.0137
http://cds.cern.ch/record/2718962
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author Dao, Valerio
author_facet Dao, Valerio
author_sort Dao, Valerio
collection CERN
description Mini-MALTA is a Monolithic Active Pixel Sensor prototype developed in the TowerJazz 180 nm CMOS imaging process, with a small collection electrode design (3μm$^2$ ), and a small pixel size (36.4 μm), on high resistivity substrates and large voltage bias. It targets the outermost layer of the ATLAS ITK Pixel detector for the HL-LHC. This design addresses the pixel inefficiencies observed in previous MALTA and TJ-Monopix prototypes. The implementation of a mask change in the fabrication or an additional implant allows to improve the charge collection performance at the edges of the pixel thus improving the radiation hardness properties. This contribution will present the results from characterisation in particle beam tests that show full efficiency up to 1 · 10$^{15}$ $n_{eq}$ /cm$^2$ .
id oai-inspirehep.net-1792968
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2020
publisher SISSA
record_format invenio
spelling oai-inspirehep.net-17929682022-08-17T12:59:37Zdoi:10.22323/1.370.0137http://cds.cern.ch/record/2718962engDao, ValerioIncreased radiation tolerance of CMOS sensors with small collection electrodes through accelerated charge collectionDetectors and Experimental TechniquesMini-MALTA is a Monolithic Active Pixel Sensor prototype developed in the TowerJazz 180 nm CMOS imaging process, with a small collection electrode design (3μm$^2$ ), and a small pixel size (36.4 μm), on high resistivity substrates and large voltage bias. It targets the outermost layer of the ATLAS ITK Pixel detector for the HL-LHC. This design addresses the pixel inefficiencies observed in previous MALTA and TJ-Monopix prototypes. The implementation of a mask change in the fabrication or an additional implant allows to improve the charge collection performance at the edges of the pixel thus improving the radiation hardness properties. This contribution will present the results from characterisation in particle beam tests that show full efficiency up to 1 · 10$^{15}$ $n_{eq}$ /cm$^2$ .SISSAoai:inspirehep.net:17929682020
spellingShingle Detectors and Experimental Techniques
Dao, Valerio
Increased radiation tolerance of CMOS sensors with small collection electrodes through accelerated charge collection
title Increased radiation tolerance of CMOS sensors with small collection electrodes through accelerated charge collection
title_full Increased radiation tolerance of CMOS sensors with small collection electrodes through accelerated charge collection
title_fullStr Increased radiation tolerance of CMOS sensors with small collection electrodes through accelerated charge collection
title_full_unstemmed Increased radiation tolerance of CMOS sensors with small collection electrodes through accelerated charge collection
title_short Increased radiation tolerance of CMOS sensors with small collection electrodes through accelerated charge collection
title_sort increased radiation tolerance of cmos sensors with small collection electrodes through accelerated charge collection
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.22323/1.370.0137
http://cds.cern.ch/record/2718962
work_keys_str_mv AT daovalerio increasedradiationtoleranceofcmossensorswithsmallcollectionelectrodesthroughacceleratedchargecollection