Cargando…
Investigation of nitrogen enriched silicon for particle detectors
This article explores the viability of nitrogen enriched silicon for particle physics application. For that purpose silicon diodes and strip sensors were produced using high resistivity float zone silicon, diffusion oxygenated float zone silicon, nitrogen enriched float zone silicon and magnetic Czo...
Autores principales: | Hönig, J C, Baselga, M, Vignali, M Centis, Diehl, L, Dierlamm, A, Fretwurst, E, Kaminski, P, Moll, M, Moos, F, Mori, R, Parzefall, U, Pellegrini, G, Rafí, J M, Schwandt, J, Wiik-Fuchs, L |
---|---|
Lenguaje: | eng |
Publicado: |
2020
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/15/05/P05006 http://cds.cern.ch/record/2725315 |
Ejemplares similares
-
Characterization of oxygen dimer-enriched silicon detectors
por: Boisvert, V, et al.
Publicado: (2005) -
Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation
por: Liao, C., et al.
Publicado: (2023) -
Radiation Hardness of Silicon Detectors for Applications in High-Energy Physics Experiments
por: Fretwurst, E, et al.
Publicado: (2000) -
The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
por: Liao, C, et al.
Publicado: (2022) -
Leakage current of hadron irradiated silicon detectors: material dependence
por: Moll, Michael, et al.
Publicado: (1999)