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Edge-TCT Characterisation on TowerJazz CMOS Sensor for the ITK Phase II Upgrade
The upcoming Phase II upgrade of the Large Hadron Collider (LHC) for the High Luminosity LHC requires the characterisation of new pixel sensors intended to be installed within the ATLAS experiment's inner tracker by 2024. The Edge Transient Current Technique is used to probe prototype TowerJazz...
Autores principales: | , , |
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Lenguaje: | eng |
Publicado: |
SISSA
2018
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.22323/1.309.0055 http://cds.cern.ch/record/2743161 |
_version_ | 1780968587018633216 |
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author | Sharma, Abhishek Solans Sanchez, Carlos Bortoletto, Daniela |
author_facet | Sharma, Abhishek Solans Sanchez, Carlos Bortoletto, Daniela |
author_sort | Sharma, Abhishek |
collection | CERN |
description | The upcoming Phase II upgrade of the Large Hadron Collider (LHC) for the High Luminosity LHC requires the characterisation of new pixel sensors intended to be installed within the ATLAS experiment's inner tracker by 2024. The Edge Transient Current Technique is used to probe prototype TowerJazz Investigator I test structures to study their radiation hardness performance including depletion levels and charge sharing. |
id | oai-inspirehep.net-1810835 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2018 |
publisher | SISSA |
record_format | invenio |
spelling | oai-inspirehep.net-18108352020-10-31T19:42:18Zdoi:10.22323/1.309.0055http://cds.cern.ch/record/2743161engSharma, AbhishekSolans Sanchez, CarlosBortoletto, DanielaEdge-TCT Characterisation on TowerJazz CMOS Sensor for the ITK Phase II UpgradeDetectors and Experimental TechniquesThe upcoming Phase II upgrade of the Large Hadron Collider (LHC) for the High Luminosity LHC requires the characterisation of new pixel sensors intended to be installed within the ATLAS experiment's inner tracker by 2024. The Edge Transient Current Technique is used to probe prototype TowerJazz Investigator I test structures to study their radiation hardness performance including depletion levels and charge sharing.SISSAoai:inspirehep.net:18108352018 |
spellingShingle | Detectors and Experimental Techniques Sharma, Abhishek Solans Sanchez, Carlos Bortoletto, Daniela Edge-TCT Characterisation on TowerJazz CMOS Sensor for the ITK Phase II Upgrade |
title | Edge-TCT Characterisation on TowerJazz CMOS Sensor for the ITK Phase II Upgrade |
title_full | Edge-TCT Characterisation on TowerJazz CMOS Sensor for the ITK Phase II Upgrade |
title_fullStr | Edge-TCT Characterisation on TowerJazz CMOS Sensor for the ITK Phase II Upgrade |
title_full_unstemmed | Edge-TCT Characterisation on TowerJazz CMOS Sensor for the ITK Phase II Upgrade |
title_short | Edge-TCT Characterisation on TowerJazz CMOS Sensor for the ITK Phase II Upgrade |
title_sort | edge-tct characterisation on towerjazz cmos sensor for the itk phase ii upgrade |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.22323/1.309.0055 http://cds.cern.ch/record/2743161 |
work_keys_str_mv | AT sharmaabhishek edgetctcharacterisationontowerjazzcmossensorfortheitkphaseiiupgrade AT solanssanchezcarlos edgetctcharacterisationontowerjazzcmossensorfortheitkphaseiiupgrade AT bortolettodaniela edgetctcharacterisationontowerjazzcmossensorfortheitkphaseiiupgrade |