Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons

Silicon Carbide (SiC) is a relatively new entry in the world of solid-state detectors. Although SiC response to neutrons is more complex than the one obtained with diamonds, the measured energy resolution (FWHM/ Ed<4%) makes SiC an interesting alternative to diamond and silicon detectors for fast...

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Detalles Bibliográficos
Autores principales: Kushoro, M H, Rebai, M, Dicorato, M, Rigamonti, D, Altana, C, Cazzaniga, C, Croci, G, Gorini, G, Lanzalone, G, La Via, F, Muoio, A, Muraro, A, Murtas, F, Perelli Cippo, E, Tardocchi, M, Barbagallo, M, Mingrone, F, Tudisco, S
Lenguaje:eng
Publicado: 2020
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2020.164578
http://cds.cern.ch/record/2730593
Descripción
Sumario:Silicon Carbide (SiC) is a relatively new entry in the world of solid-state detectors. Although SiC response to neutrons is more complex than the one obtained with diamonds, the measured energy resolution (FWHM/ Ed<4%) makes SiC an interesting alternative to diamond and silicon detectors for fast neutrons. The results obtained from the measurements of the response of a 100μm thick SiC detector to neutrons in the energy range between 3 and 20 MeV at the n_TOF spallation source at CERN are presented in this paper.

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