TCAD Device Simulations of Irradiated Silicon Detectors

The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. This review examines the challenges ahead for different kind of detector devices, with attention to the acceptor remov...

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Detalles Bibliográficos
Autores principales: Palomo Pinto, Francisco Rogelio, Moll, Michael, Schwandt, Jörn, Villani, E Giulio, Gurimskaya, Yana, Millán, Rafael
Lenguaje:eng
Publicado: SISSA 2020
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.22323/1.373.0051
http://cds.cern.ch/record/2746484
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author Palomo Pinto, Francisco Rogelio
Moll, Michael
Schwandt, Jörn
Villani, E Giulio
Gurimskaya, Yana
Millán, Rafael
author_facet Palomo Pinto, Francisco Rogelio
Moll, Michael
Schwandt, Jörn
Villani, E Giulio
Gurimskaya, Yana
Millán, Rafael
author_sort Palomo Pinto, Francisco Rogelio
collection CERN
description The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. This review examines the challenges ahead for different kind of detector devices, with attention to the acceptor removal effect in LGADs, surface damage for Monolithics and Strips and bulk damage in all sensor types.
id oai-inspirehep.net-1816974
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2020
publisher SISSA
record_format invenio
spelling oai-inspirehep.net-18169742021-01-27T21:58:03Zdoi:10.22323/1.373.0051http://cds.cern.ch/record/2746484engPalomo Pinto, Francisco RogelioMoll, MichaelSchwandt, JörnVillani, E GiulioGurimskaya, YanaMillán, RafaelTCAD Device Simulations of Irradiated Silicon DetectorsDetectors and Experimental TechniquesThe high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. This review examines the challenges ahead for different kind of detector devices, with attention to the acceptor removal effect in LGADs, surface damage for Monolithics and Strips and bulk damage in all sensor types.SISSAoai:inspirehep.net:18169742020
spellingShingle Detectors and Experimental Techniques
Palomo Pinto, Francisco Rogelio
Moll, Michael
Schwandt, Jörn
Villani, E Giulio
Gurimskaya, Yana
Millán, Rafael
TCAD Device Simulations of Irradiated Silicon Detectors
title TCAD Device Simulations of Irradiated Silicon Detectors
title_full TCAD Device Simulations of Irradiated Silicon Detectors
title_fullStr TCAD Device Simulations of Irradiated Silicon Detectors
title_full_unstemmed TCAD Device Simulations of Irradiated Silicon Detectors
title_short TCAD Device Simulations of Irradiated Silicon Detectors
title_sort tcad device simulations of irradiated silicon detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.22323/1.373.0051
http://cds.cern.ch/record/2746484
work_keys_str_mv AT palomopintofranciscorogelio tcaddevicesimulationsofirradiatedsilicondetectors
AT mollmichael tcaddevicesimulationsofirradiatedsilicondetectors
AT schwandtjorn tcaddevicesimulationsofirradiatedsilicondetectors
AT villaniegiulio tcaddevicesimulationsofirradiatedsilicondetectors
AT gurimskayayana tcaddevicesimulationsofirradiatedsilicondetectors
AT millanrafael tcaddevicesimulationsofirradiatedsilicondetectors

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