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TCAD Device Simulations of Irradiated Silicon Detectors
The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. This review examines the challenges ahead for different kind of detector devices, with attention to the acceptor remov...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
SISSA
2020
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.22323/1.373.0051 http://cds.cern.ch/record/2746484 |