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TCAD Device Simulations of Irradiated Silicon Detectors

The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. This review examines the challenges ahead for different kind of detector devices, with attention to the acceptor remov...

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Detalles Bibliográficos
Autores principales:	Palomo Pinto, Francisco Rogelio, Moll, Michael, Schwandt, Jörn, Villani, E Giulio, Gurimskaya, Yana, Millán, Rafael
Lenguaje:	eng
Publicado:	SISSA 2020
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.22323/1.373.0051 http://cds.cern.ch/record/2746484

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