Laser triggering of solid-state switches

A theoretical and experimental investigation has been made into the laser activated Silicon Controlled Rectifier (SCR) turn-on process. Thanks to the measurement of illumination profile of the thyristor gate and a one-dimensional commutation model, a prediction can be made of the temperature hot spo...

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Detalles Bibliográficos
Autores principales: Rodziewicz, J, Runason Simonsen, D, Carlier, E, Goddard, B
Lenguaje:eng
Publicado: 2019
Acceso en línea:https://dx.doi.org/10.23919/EPE.2019.8914789
http://cds.cern.ch/record/2743752
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author Rodziewicz, J
Runason Simonsen, D
Carlier, E
Goddard, B
author_facet Rodziewicz, J
Runason Simonsen, D
Carlier, E
Goddard, B
author_sort Rodziewicz, J
collection CERN
description A theoretical and experimental investigation has been made into the laser activated Silicon Controlled Rectifier (SCR) turn-on process. Thanks to the measurement of illumination profile of the thyristor gate and a one-dimensional commutation model, a prediction can be made of the temperature hot spots of the initially conducting area region adjacent to the gate. The improvement of switching characteristics with respect to the datasheet parameters for an electrically gated configuration will be demonstrated; 8-fold turn-on delay reduction and the rate of rise of the on-state current (di/dt) increased over 45 times at low pulse repetition rate, without destroying the device.
id oai-inspirehep.net-1827432
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
record_format invenio
spelling oai-inspirehep.net-18274322022-10-10T13:13:08Zdoi:10.23919/EPE.2019.8914789http://cds.cern.ch/record/2743752engRodziewicz, JRunason Simonsen, DCarlier, EGoddard, BLaser triggering of solid-state switchesA theoretical and experimental investigation has been made into the laser activated Silicon Controlled Rectifier (SCR) turn-on process. Thanks to the measurement of illumination profile of the thyristor gate and a one-dimensional commutation model, a prediction can be made of the temperature hot spots of the initially conducting area region adjacent to the gate. The improvement of switching characteristics with respect to the datasheet parameters for an electrically gated configuration will be demonstrated; 8-fold turn-on delay reduction and the rate of rise of the on-state current (di/dt) increased over 45 times at low pulse repetition rate, without destroying the device.oai:inspirehep.net:18274322019
spellingShingle Rodziewicz, J
Runason Simonsen, D
Carlier, E
Goddard, B
Laser triggering of solid-state switches
title Laser triggering of solid-state switches
title_full Laser triggering of solid-state switches
title_fullStr Laser triggering of solid-state switches
title_full_unstemmed Laser triggering of solid-state switches
title_short Laser triggering of solid-state switches
title_sort laser triggering of solid-state switches
url https://dx.doi.org/10.23919/EPE.2019.8914789
http://cds.cern.ch/record/2743752
work_keys_str_mv AT rodziewiczj lasertriggeringofsolidstateswitches
AT runasonsimonsend lasertriggeringofsolidstateswitches
AT carliere lasertriggeringofsolidstateswitches
AT goddardb lasertriggeringofsolidstateswitches

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