Study of the Deposited Energy Spectra in Silicon by High-Energy Neutron and Mixed Fields

The energy deposition spectra in a silicon detector have been measured at chip irradiation (ChipIr) and Cern High energy AcceleRator Mixed field (CHARM) facilities. The measurement was possible thanks to a fast electronic chain that can cope with high instantaneous fluxes. A computational study of the energy deposition in a silicon detector allows for the comparison of high-energy spallation facilities dedicated to the irradiation of microelectronics and for the validation of radiation transport models. The measured time structure of the facilities pulses is also presented with an example on how to use this result to correct in the case of large dead times (DTs).