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Performance of irradiated bulk SiC detectors
Silicon carbide (SiC) is a wide bandgap material with many excellent properties for future use as a detector medium. We present here the performance of irradiated planar detector diodes made from 100-$\mu \rm{m}$-thick semi-insulating SiC from Cree. Ohmic/Schottky diodes were produced and characteri...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(03)01560-2 http://cds.cern.ch/record/2636084 |