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First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
Heavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. The n-side read out has been successfully used in combina...
Autores principales: | , , , , |
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Lenguaje: | eng |
Publicado: |
2004
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2003.11.015 http://cds.cern.ch/record/2635927 |
_version_ | 1780959899311669248 |
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author | Casse, G Allport, P P Martí i Garcia, S Lozano, M Turner, P R |
author_facet | Casse, G Allport, P P Martí i Garcia, S Lozano, M Turner, P R |
author_sort | Casse, G |
collection | CERN |
description | Heavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. The n-side read out has been successfully used in combination with oxygen-enriched n-type silicon substrate to maximise the radiation hardness of microstrip detectors. Alternatively, the n-side read out can be implemented on p-type substrates reducing the complexity of fabrication. Miniature silicon microstrip detectors made on standard and oxygen-enriched p-type substrate have been produced. The charge collection properties of such detectors with and without oxygenation are here compared for the first time after severe charged hadron irradiation. |
id | oai-inspirehep.net-648133 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2004 |
record_format | invenio |
spelling | oai-inspirehep.net-6481332019-09-30T06:29:59Zdoi:10.1016/j.nima.2003.11.015http://cds.cern.ch/record/2635927engCasse, GAllport, P PMartí i Garcia, SLozano, MTurner, P RFirst results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type siliconDetectors and Experimental TechniquesHeavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. The n-side read out has been successfully used in combination with oxygen-enriched n-type silicon substrate to maximise the radiation hardness of microstrip detectors. Alternatively, the n-side read out can be implemented on p-type substrates reducing the complexity of fabrication. Miniature silicon microstrip detectors made on standard and oxygen-enriched p-type substrate have been produced. The charge collection properties of such detectors with and without oxygenation are here compared for the first time after severe charged hadron irradiation.oai:inspirehep.net:6481332004 |
spellingShingle | Detectors and Experimental Techniques Casse, G Allport, P P Martí i Garcia, S Lozano, M Turner, P R First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon |
title | First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon |
title_full | First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon |
title_fullStr | First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon |
title_full_unstemmed | First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon |
title_short | First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon |
title_sort | first results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1016/j.nima.2003.11.015 http://cds.cern.ch/record/2635927 |
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