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First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon

Heavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. The n-side read out has been successfully used in combina...

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Detalles Bibliográficos
Autores principales: Casse, G, Allport, P P, Martí i Garcia, S, Lozano, M, Turner, P R
Lenguaje:eng
Publicado: 2004
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2003.11.015
http://cds.cern.ch/record/2635927
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author Casse, G
Allport, P P
Martí i Garcia, S
Lozano, M
Turner, P R
author_facet Casse, G
Allport, P P
Martí i Garcia, S
Lozano, M
Turner, P R
author_sort Casse, G
collection CERN
description Heavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. The n-side read out has been successfully used in combination with oxygen-enriched n-type silicon substrate to maximise the radiation hardness of microstrip detectors. Alternatively, the n-side read out can be implemented on p-type substrates reducing the complexity of fabrication. Miniature silicon microstrip detectors made on standard and oxygen-enriched p-type substrate have been produced. The charge collection properties of such detectors with and without oxygenation are here compared for the first time after severe charged hadron irradiation.
id oai-inspirehep.net-648133
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
record_format invenio
spelling oai-inspirehep.net-6481332019-09-30T06:29:59Zdoi:10.1016/j.nima.2003.11.015http://cds.cern.ch/record/2635927engCasse, GAllport, P PMartí i Garcia, SLozano, MTurner, P RFirst results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type siliconDetectors and Experimental TechniquesHeavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. The n-side read out has been successfully used in combination with oxygen-enriched n-type silicon substrate to maximise the radiation hardness of microstrip detectors. Alternatively, the n-side read out can be implemented on p-type substrates reducing the complexity of fabrication. Miniature silicon microstrip detectors made on standard and oxygen-enriched p-type substrate have been produced. The charge collection properties of such detectors with and without oxygenation are here compared for the first time after severe charged hadron irradiation.oai:inspirehep.net:6481332004
spellingShingle Detectors and Experimental Techniques
Casse, G
Allport, P P
Martí i Garcia, S
Lozano, M
Turner, P R
First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
title First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
title_full First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
title_fullStr First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
title_full_unstemmed First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
title_short First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
title_sort first results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2003.11.015
http://cds.cern.ch/record/2635927
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