Cargando…
First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
Heavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. The n-side read out has been successfully used in combina...
| Autores principales: | , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2004
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2003.11.015 http://cds.cern.ch/record/2635927 |