Cargando…
Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
Holes were continuously injected into irradiated diodes by light illumination of the n$^+$-side. The charge of holes trapped in the radiation-induced levels modified the effective space charge. Charge collection efficiency was measured with a $^{90}$Sr source at different bias voltages, temperatures...
| Autores principales: | , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2004
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2003.11.017 http://cds.cern.ch/record/2635928 |
| Sumario: | Holes were continuously injected into irradiated diodes by light illumination of the n$^+$-side. The charge of holes trapped in the radiation-induced levels modified the effective space charge. Charge collection efficiency was measured with a $^{90}$Sr source at different bias voltages, temperatures and hole currents. CCE was found to be limited by the trapping of signal charge. |
|---|