Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection

Holes were continuously injected into irradiated diodes by light illumination of the n$^+$-side. The charge of holes trapped in the radiation-induced levels modified the effective space charge. Charge collection efficiency was measured with a $^{90}$Sr source at different bias voltages, temperatures...

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Detalles Bibliográficos
Autores principales: Cindro, V, Mandić, I, Kramberger, G, Mikuž, M, Zavrtanik, M
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2003.11.017
http://cds.cern.ch/record/2635928
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author Cindro, V
Mandić, I
Kramberger, G
Mikuž, M
Zavrtanik, M
author_facet Cindro, V
Mandić, I
Kramberger, G
Mikuž, M
Zavrtanik, M
author_sort Cindro, V
collection CERN
description Holes were continuously injected into irradiated diodes by light illumination of the n$^+$-side. The charge of holes trapped in the radiation-induced levels modified the effective space charge. Charge collection efficiency was measured with a $^{90}$Sr source at different bias voltages, temperatures and hole currents. CCE was found to be limited by the trapping of signal charge.
id oai-inspirehep.net-648134
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
record_format invenio
spelling oai-inspirehep.net-6481342019-09-30T06:29:59Zdoi:10.1016/j.nima.2003.11.017http://cds.cern.ch/record/2635928engCindro, VMandić, IKramberger, GMikuž, MZavrtanik, MRecovery of charge collection in heavily irradiated silicon diodes with continuous hole injectionDetectors and Experimental TechniquesHoles were continuously injected into irradiated diodes by light illumination of the n$^+$-side. The charge of holes trapped in the radiation-induced levels modified the effective space charge. Charge collection efficiency was measured with a $^{90}$Sr source at different bias voltages, temperatures and hole currents. CCE was found to be limited by the trapping of signal charge.oai:inspirehep.net:6481342004
spellingShingle Detectors and Experimental Techniques
Cindro, V
Mandić, I
Kramberger, G
Mikuž, M
Zavrtanik, M
Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
title Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
title_full Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
title_fullStr Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
title_full_unstemmed Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
title_short Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
title_sort recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2003.11.017
http://cds.cern.ch/record/2635928
work_keys_str_mv AT cindrov recoveryofchargecollectioninheavilyirradiatedsilicondiodeswithcontinuousholeinjection
AT mandici recoveryofchargecollectioninheavilyirradiatedsilicondiodeswithcontinuousholeinjection
AT krambergerg recoveryofchargecollectioninheavilyirradiatedsilicondiodeswithcontinuousholeinjection
AT mikuzm recoveryofchargecollectioninheavilyirradiatedsilicondiodeswithcontinuousholeinjection
AT zavrtanikm recoveryofchargecollectioninheavilyirradiatedsilicondiodeswithcontinuousholeinjection

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