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Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
Holes were continuously injected into irradiated diodes by light illumination of the n$^+$-side. The charge of holes trapped in the radiation-induced levels modified the effective space charge. Charge collection efficiency was measured with a $^{90}$Sr source at different bias voltages, temperatures...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2003.11.017 http://cds.cern.ch/record/2635928 |