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Radiation hardness of different silicon materials after high-energy electron irradiation
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentr...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2004.05.057 http://cds.cern.ch/record/2635929 |
| _version_ | 1780959899740536832 |
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| author | Dittongo, S Bosisio, L Ciacchi, M Contarato, D D'Auria, G Fretwurst, E Lindstrom, G |
| author_facet | Dittongo, S Bosisio, L Ciacchi, M Contarato, D D'Auria, G Fretwurst, E Lindstrom, G |
| author_sort | Dittongo, S |
| collection | CERN |
| description | The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated. |
| id | oai-inspirehep.net-663943 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2004 |
| record_format | invenio |
| spelling | oai-inspirehep.net-6639432019-09-30T06:29:59Zdoi:10.1016/j.nima.2004.05.057http://cds.cern.ch/record/2635929engDittongo, SBosisio, LCiacchi, MContarato, DD'Auria, GFretwurst, ELindstrom, GRadiation hardness of different silicon materials after high-energy electron irradiationDetectors and Experimental TechniquesThe radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated.oai:inspirehep.net:6639432004 |
| spellingShingle | Detectors and Experimental Techniques Dittongo, S Bosisio, L Ciacchi, M Contarato, D D'Auria, G Fretwurst, E Lindstrom, G Radiation hardness of different silicon materials after high-energy electron irradiation |
| title | Radiation hardness of different silicon materials after high-energy electron irradiation |
| title_full | Radiation hardness of different silicon materials after high-energy electron irradiation |
| title_fullStr | Radiation hardness of different silicon materials after high-energy electron irradiation |
| title_full_unstemmed | Radiation hardness of different silicon materials after high-energy electron irradiation |
| title_short | Radiation hardness of different silicon materials after high-energy electron irradiation |
| title_sort | radiation hardness of different silicon materials after high-energy electron irradiation |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/j.nima.2004.05.057 http://cds.cern.ch/record/2635929 |
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