Cargando…

Lithium ion irradiation effects on epitaxial silicon detectors

Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in...

Descripción completa

Detalles Bibliográficos
Autores principales: Candelori, A, Bisello, D, Rando, R, Schramm, A, Contarato, D, Fretwurst, E, Lindstrom, G, Wyss, J
Lenguaje:eng
Publicado: 2004
Materias:
Acceso en línea:https://dx.doi.org/10.1109/TNS.2004.832702
http://cds.cern.ch/record/2635930
Descripción
Sumario:Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. The reverse current increase, the variation of the depletion voltage, and their annealing characteristics, as well as the charge collection properties, are presented and discussed.