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Lithium ion irradiation effects on epitaxial silicon detectors
Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2004.832702 http://cds.cern.ch/record/2635930 |