Cargando…

Lithium ion irradiation effects on epitaxial silicon detectors

Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in...

Descripción completa

Detalles Bibliográficos
Autores principales:	Candelori, A, Bisello, D, Rando, R, Schramm, A, Contarato, D, Fretwurst, E, Lindstrom, G, Wyss, J
Lenguaje:	eng
Publicado:	2004
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/TNS.2004.832702 http://cds.cern.ch/record/2635930

Ejemplares similares

Irradiation effects on thin epitaxial silicon detectors
por: Khomenkov, V, et al.
Publicado: (2006)

Defect characterization in silicon particle detectors irradiated with Li ions
por: Scaringella, M, et al.
Publicado: (2006)

Lithium ion irradiation of standard and oxygenated silicon diodes
por: Candelori, A, et al.
Publicado: (2004)

Charge collection efficiency of standard and oxygenated silicon microstrip detectors
por: Stavitski, I, et al.
Publicado: (2002)

Radiation hardness of different silicon materials after high-energy electron irradiation
por: Dittongo, S, et al.
Publicado: (2004)

Leakage current of hadron irradiated silicon detectors: material dependence
por: Moll, Michael, et al.
Publicado: (1999)

Epitaxial silicon detectors for particle tracking--Radiation tolerance at extreme hadron fluences
por: Lindstrom, Gunnar, et al.
Publicado: (2006)

Superior radiation tolerance of thin epitaxial silicon detectors
por: Kramberger, G, et al.
Publicado: (2003)

Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation
por: Stahl, J, et al.
Publicado: (2003)

Microscopic studies on various silicon materials irradiated with high energy particles
por: Kuhnke, M, et al.
Publicado: (2000)

Some annealing effects in proton irradiated silicon detectors
por: Pintilie, I, et al.
Publicado: (2000)

Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes
por: Boscardin, Maurizio, et al.
Publicado: (2005)

Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration
por: Moll, Michael, et al.
Publicado: (2000)

The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
por: Liao, C, et al.
Publicado: (2022)

Radiation studies and operational projections for silicon in the ATLAS inner detector
por: Chilingarov, A G, et al.
Publicado: (1995)

Radiation Hardness of Silicon Detectors for Applications in High-Energy Physics Experiments
por: Fretwurst, E, et al.
Publicado: (2000)

Long term reverse annealing in silicon detectors
por: Schulz, T, et al.
Publicado: (1994)

Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
por: Pintilie, I, et al.
Publicado: (2003)

Study of the charge multiplication phenomenon is silicon epitaxial detector
por: Sobolev, Yu G, et al.
Publicado: (1999)

Characterization of 150 $\mu$m thick epitaxial silicon detectors from different producers after proton irradiation
por: Hoedlmoser, H, et al.
Publicado: (2007)

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
por: Fretwurst, E., et al.
Publicado: (2002)

Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS
por: Bacchetta, N, et al.
Publicado: (2001)

Proposal for the development of optimized ATLAS silicon strip detectors
por: Cesura, G, et al.
Publicado: (1994)

Pion-induced damage in silicon detectors
por: Bates, S, et al.
Publicado: (1995)

Characterization of thin irradiated epitaxial silicon sensors for the CMS phase II pixel upgrade
por: Centis Vignali, Matteo, et al.
Publicado: (2014)

Performance of irradiated silicon microstrip detectors
por: Catacchini, E, et al.
Publicado: (1999)

Charge Transport in Non-Irradiated and Irradiated Silicon Detectors
por: Leroy, C, et al.
Publicado: (1998)

The Electric Field in Irradiated Silicon Detectors
por: Beattie, LJ, et al.
Publicado: (1997)

Simulation of signal in irradiated silicon pixel detectors
por: Kramberger, G, et al.
Publicado: (2003)

Test beam results on single-sided irradiated silicon microstrip detectors
por: Azzi, Patrizia, et al.
Publicado: (1999)

Radiation induced bulk damage in silicon detectors
por: Taylor, G N, et al.
Publicado: (1996)

Test results on heavily irradiated silicon detectors for the CMS experiment at LHC
por: Albergo, S, et al.
Publicado: (2000)

Heavy charged particle detectors based on high resistivity epitaxial silicon layers
por: Kushniruk, V F, et al.
Publicado: (1999)

Characterization of neutron irradiated silicon microstrip detectors
por: Lenzi, M, et al.
Publicado: (1999)

Study of charge transport in non-irradiated and irradiated silicon detectors
por: Leroy, C, et al.
Publicado: (1998)

Characterization of neutron irradiated, low-resistivity silicon detectors
por: Angarano, M M, et al.
Publicado: (2000)

Beam test results for single- and double-sided irradiated silicon detector prototypes of the CMS central detector
por: Angarano, M M, et al.
Publicado: (1998)

Charge collection in irradiated silicon detectors
por: Krasel, Olaf
Publicado: (2018)

Signal development in irradiated silicon detectors
por: Kramberger, Gregor
Publicado: (2001)

Signals in non-irradiated and irradiated single sided silicon detectors
por: Kramberger, G, et al.
Publicado: (2000)

Cannot write session to /tmp/vufind_sessions/sess_ktt1jqksv6gm11ao67eanqql4d