Measurements and simulations of charge collection efficiency of p$^+$/n junction SiC detectors

Due to its excellent electrical and physical properties, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments (RD50, LHCC 2002–2003, 15 February 2002, CERN, Ginevra). In this work p$^+$/n SiC diodes realised on a medium-doped ($1 \times 10^{15} \rm{cm}^{−3}$), 40 $\mu \rm{m}$ thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under $\beta$ particle radiation from a $^{90}$Sr source are presented. Preliminary results up to 900 V reverse bias voltage show a good collection efficiency of 1700e$^−$ and a collection length (ratio between collected charge and generated e–h pairs/$\mu \rm{m}$) equal to the estimated width of the depleted region. Preliminary simulations on Schottky diodes have been carried out using the ISE-TCAD DESSIS simulation tool. Experimental results were reproduced well.