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Characterization of magnetic Czochralski silicon radiation detectors
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. Concentratio...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2005
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2005.05.001 http://cds.cern.ch/record/2635820 |