A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique

Magnetic Czochralski (MCz) silicon has recently become a promising material for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A thorough study of 24 GeV/$c$ proton-irradiated p$^+$-in-n Float Zone (FZ) , Diffusion Oxygenated Float Zone (DOFZ) and MCz silicon detectors has been conducted using the standard radiation damage characterization tools $IV$ and $CV$ , the Transient Current Technique (TCT) and annealing studies. The first systematic study on the effective trapping time in MCz silicon has been performed. The results show that the introduction rate for the traps responsible for the degradation of the effective trapping time for MCz material agrees with the introduction rate for FZ and DOFZ silicon. From the behaviour of the depletion voltage as a function of proton fluence and through the TCT technique, it has been shown that by a radiation fluence of $5 \times10^{14} \rm{p/cm}^2$ the depletion voltage has passed its minimum value without type inversion. An annealing study compares the evolution of the effective trapping time, the effective space charge density and the current-related damage parameters for MCz and DOFZ silicon.