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Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluencies of $1 \times 10^{16} \rm{n}/cm^2$. In this work two numerical simulation models will be presented for p-type...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2006
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2006.881910 http://cds.cern.ch/record/2635130 |