Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors

The Transient Current Technique (TCT) is used to measure pulse shapes of charge collection and to derive trapping times in irradiated silicon pad detectors in a fluence range up to $10^{15} \ n_{\rm{eq}} \rm{cm}^{-2}$. Simulations of electrical fields and charge collection mechanisms compared to the...

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Detalles Bibliográficos
Autores principales: Klingenberg, R, Krasel, O, Mass, M, Dobos, D, Gossling, C, Wunstorf, R
Lenguaje:eng
Publicado: 2006
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2006.05.273
http://cds.cern.ch/record/2635133
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author Klingenberg, R
Krasel, O
Mass, M
Dobos, D
Gossling, C
Wunstorf, R
author_facet Klingenberg, R
Krasel, O
Mass, M
Dobos, D
Gossling, C
Wunstorf, R
author_sort Klingenberg, R
collection CERN
description The Transient Current Technique (TCT) is used to measure pulse shapes of charge collection and to derive trapping times in irradiated silicon pad detectors in a fluence range up to $10^{15} \ n_{\rm{eq}} \rm{cm}^{-2}$. Simulations of electrical fields and charge collection mechanisms compared to the measurements of the TCT method allow to derive predictions of the charge collection efficiency. Independently, charge collection efficiencies have been determined in dedicated test beam data employing ATLAS pixel modules. Considering the geometry of pad and pixel structures the simulation for the tested fluence range can be verified and allows to extrapolate to larger fluences. This yields a useful input for the design of future silicon-based pixel detectors applicable in Super-LHC experiments.
id oai-inspirehep.net-737650
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2006
record_format invenio
spelling oai-inspirehep.net-7376502019-09-30T06:29:59Zdoi:10.1016/j.nima.2006.05.273http://cds.cern.ch/record/2635133engKlingenberg, RKrasel, OMass, MDobos, DGossling, CWunstorf, RPrediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectorsDetectors and Experimental TechniquesThe Transient Current Technique (TCT) is used to measure pulse shapes of charge collection and to derive trapping times in irradiated silicon pad detectors in a fluence range up to $10^{15} \ n_{\rm{eq}} \rm{cm}^{-2}$. Simulations of electrical fields and charge collection mechanisms compared to the measurements of the TCT method allow to derive predictions of the charge collection efficiency. Independently, charge collection efficiencies have been determined in dedicated test beam data employing ATLAS pixel modules. Considering the geometry of pad and pixel structures the simulation for the tested fluence range can be verified and allows to extrapolate to larger fluences. This yields a useful input for the design of future silicon-based pixel detectors applicable in Super-LHC experiments.oai:inspirehep.net:7376502006
spellingShingle Detectors and Experimental Techniques
Klingenberg, R
Krasel, O
Mass, M
Dobos, D
Gossling, C
Wunstorf, R
Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors
title Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors
title_full Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors
title_fullStr Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors
title_full_unstemmed Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors
title_short Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors
title_sort prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2006.05.273
http://cds.cern.ch/record/2635133
work_keys_str_mv AT klingenbergr predictionofchargecollectionefficiencyinhadronirradiatedpadandpixelsilicondetectors
AT kraselo predictionofchargecollectionefficiencyinhadronirradiatedpadandpixelsilicondetectors
AT massm predictionofchargecollectionefficiencyinhadronirradiatedpadandpixelsilicondetectors
AT dobosd predictionofchargecollectionefficiencyinhadronirradiatedpadandpixelsilicondetectors
AT gosslingc predictionofchargecollectionefficiencyinhadronirradiatedpadandpixelsilicondetectors
AT wunstorfr predictionofchargecollectionefficiencyinhadronirradiatedpadandpixelsilicondetectors

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