TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors

Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after $6 \times 10^{14} \ 1 \ \rm{MeV} n_{eq}/cm^2$ fluence. In the beam test a signal-to-noise ($S/N$) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a $S/N$ ratio of 20 for the sensors irradiated to the fluences of $1 \times 10^{14} \ 1$ and $5 \times 10^{14} \ 1 \ \rm{MeV} n_{eq}/cm^2$.