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Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities

The RD50 collaboration (sponsored by the European Organization for Nuclear Research CERN) has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tr...

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Detalles Bibliográficos
Autores principales: Betancourt, Christopher, Fadeyev, Vitaliy, Sadrozinski, Hartmut F -W, Wright, John
Lenguaje:eng
Publicado: 2010
Materias:
Acceso en línea:https://dx.doi.org/10.1117/12.862590
http://cds.cern.ch/record/2634740
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author Betancourt, Christopher
Fadeyev, Vitaliy
Sadrozinski, Hartmut F -W
Wright, John
author_facet Betancourt, Christopher
Fadeyev, Vitaliy
Sadrozinski, Hartmut F -W
Wright, John
author_sort Betancourt, Christopher
collection CERN
description The RD50 collaboration (sponsored by the European Organization for Nuclear Research CERN) has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is $10^{16}$ $1$ MeV neutron equivalent $(\rm{n}_{eq}) cm^{−2}$. This is much larger than typical fluences in space, but is mainly limited to displacement and total dose damage, without the single-event effects typical for the space environment. RD50 investigates radiation hardening from many angles, including: Search for alternative semiconductor to replace silicon, improvement of the intrinsic tolerance of the substrate material (p- vs. n-type, initial doping concentration, oxygen concentration), optimization of the readout geometry (collection of holes or electrons, surface treatment), novel detector designs (3D, edge-less, interconnects).
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2010
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spelling oai-inspirehep.net-8784882019-09-30T06:29:59Zdoi:10.1117/12.862590http://cds.cern.ch/record/2634740engBetancourt, ChristopherFadeyev, VitaliySadrozinski, Hartmut F -WWright, JohnDevelopment of radiation hard semiconductor sensors for charged particle tracking at very high luminositiesDetectors and Experimental TechniquesThe RD50 collaboration (sponsored by the European Organization for Nuclear Research CERN) has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is $10^{16}$ $1$ MeV neutron equivalent $(\rm{n}_{eq}) cm^{−2}$. This is much larger than typical fluences in space, but is mainly limited to displacement and total dose damage, without the single-event effects typical for the space environment. RD50 investigates radiation hardening from many angles, including: Search for alternative semiconductor to replace silicon, improvement of the intrinsic tolerance of the substrate material (p- vs. n-type, initial doping concentration, oxygen concentration), optimization of the readout geometry (collection of holes or electrons, surface treatment), novel detector designs (3D, edge-less, interconnects).oai:inspirehep.net:8784882010
spellingShingle Detectors and Experimental Techniques
Betancourt, Christopher
Fadeyev, Vitaliy
Sadrozinski, Hartmut F -W
Wright, John
Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities
title Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities
title_full Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities
title_fullStr Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities
title_full_unstemmed Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities
title_short Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities
title_sort development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1117/12.862590
http://cds.cern.ch/record/2634740
work_keys_str_mv AT betancourtchristopher developmentofradiationhardsemiconductorsensorsforchargedparticletrackingatveryhighluminosities
AT fadeyevvitaliy developmentofradiationhardsemiconductorsensorsforchargedparticletrackingatveryhighluminosities
AT sadrozinskihartmutfw developmentofradiationhardsemiconductorsensorsforchargedparticletrackingatveryhighluminosities
AT wrightjohn developmentofradiationhardsemiconductorsensorsforchargedparticletrackingatveryhighluminosities