Silicon detectors for the super LHC

The luminosity upgrade of the Large Hadron Collider (LHC) at CERN to the Super LHC (sLHC) will increase the radiation dose at the experiments by roughly an order of magnitude. The elevated radiation levels require the LHC experiments to upgrade th eir tracking systems with extremely radiation hard detectors, capable of withstanding about a 1-MeV neutron-equivalent ($\rm{n}_{eq}$) fluence of $10^{16}$ per square centimeter for the innermost tracking layers. Recent results on radiation hardening technologies developed by the RD50 Collaboration for sLHC use are reported. Silicon detectors have been designed and produced on n- and p-type wafers made by float zone, epitaxial and Czochralski technologies. Their charge collection efficiency after proton, neutron, pion, and mixed irradiation to sLHC fluences has been studied. Novel detector concepts have been designed, produced, and tested as well. Radiation-induced microscopic defects have been investigated and can be partly linked to the performance degradation of irradiated detectors.