Sensitivity of Al-Doped Zinc-Oxide Extended Gate Field Effect Transistors to Low-Dose X-ray Radiation

Herein, we investigated the applicability of thick film and bulk disk forms of aluminum-doped zinc oxide (AZO) for low-dose X-ray radiation dosimetry using the extended gate field effect transistor (EGFET) configuration. The samples were fabricated using the chemical bath deposition (CBD) technique....

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Detalles Bibliográficos
Autores principales: Ali, Amal Mohamed Ahmed, Ahmed, Naser M., Kabir, Norlaili A., AL-Diabat, Ahmad M., Algadri, Natheer A., Alsadig, Ahmed, Aldaghri, Osamah A., Ibnaouf, Khalid H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004138/
https://www.ncbi.nlm.nih.gov/pubmed/36902983
http://dx.doi.org/10.3390/ma16051868

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004138/
https://www.ncbi.nlm.nih.gov/pubmed/36902983
http://dx.doi.org/10.3390/ma16051868

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