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Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition

In this study, a ferroelectric layer was formed on a ferroelectric device via plasma enhanced atomic layer deposition. The device used 50 nm thick TiN as upper and lower electrodes, and an Hf(0.5)Zr(0.5)O(2) (HZO) ferroelectric material was applied to fabricate a metal–ferroelectric–metal-type capac...

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Autores principales: Song, Ji-Na, Oh, Min-Jung, Yoon, Chang-Bun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004304/
https://www.ncbi.nlm.nih.gov/pubmed/36903074
http://dx.doi.org/10.3390/ma16051959
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author Song, Ji-Na
Oh, Min-Jung
Yoon, Chang-Bun
author_facet Song, Ji-Na
Oh, Min-Jung
Yoon, Chang-Bun
author_sort Song, Ji-Na
collection PubMed
description In this study, a ferroelectric layer was formed on a ferroelectric device via plasma enhanced atomic layer deposition. The device used 50 nm thick TiN as upper and lower electrodes, and an Hf(0.5)Zr(0.5)O(2) (HZO) ferroelectric material was applied to fabricate a metal–ferroelectric–metal-type capacitor. HZO ferroelectric devices were fabricated in accordance with three principles to improve their ferroelectric properties. First, the HZO nanolaminate thickness of the ferroelectric layers was varied. Second, heat treatment was performed at 450, 550, and 650 °C to investigate the changes in the ferroelectric characteristics as a function of the heat-treatment temperature. Finally, ferroelectric thin films were formed with or without seed layers. Electrical characteristics such as the I–E characteristics, P–E hysteresis, and fatigue endurance were analyzed using a semiconductor parameter analyzer. The crystallinity, component ratio, and thickness of the nanolaminates of the ferroelectric thin film were analyzed via X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy. The residual polarization of the (20,20)*3 device heat treated at 550 °C was 23.94 μC/cm(2), whereas that of the D(20,20)*3 device was 28.18 μC/cm(2), which improved the characteristics. In addition, in the fatigue endurance test, the wake-up effect was observed in specimens with bottom and dual seed layers, which exhibited excellent durability after 10(8) cycles.
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spelling pubmed-100043042023-03-11 Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition Song, Ji-Na Oh, Min-Jung Yoon, Chang-Bun Materials (Basel) Article In this study, a ferroelectric layer was formed on a ferroelectric device via plasma enhanced atomic layer deposition. The device used 50 nm thick TiN as upper and lower electrodes, and an Hf(0.5)Zr(0.5)O(2) (HZO) ferroelectric material was applied to fabricate a metal–ferroelectric–metal-type capacitor. HZO ferroelectric devices were fabricated in accordance with three principles to improve their ferroelectric properties. First, the HZO nanolaminate thickness of the ferroelectric layers was varied. Second, heat treatment was performed at 450, 550, and 650 °C to investigate the changes in the ferroelectric characteristics as a function of the heat-treatment temperature. Finally, ferroelectric thin films were formed with or without seed layers. Electrical characteristics such as the I–E characteristics, P–E hysteresis, and fatigue endurance were analyzed using a semiconductor parameter analyzer. The crystallinity, component ratio, and thickness of the nanolaminates of the ferroelectric thin film were analyzed via X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy. The residual polarization of the (20,20)*3 device heat treated at 550 °C was 23.94 μC/cm(2), whereas that of the D(20,20)*3 device was 28.18 μC/cm(2), which improved the characteristics. In addition, in the fatigue endurance test, the wake-up effect was observed in specimens with bottom and dual seed layers, which exhibited excellent durability after 10(8) cycles. MDPI 2023-02-27 /pmc/articles/PMC10004304/ /pubmed/36903074 http://dx.doi.org/10.3390/ma16051959 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Song, Ji-Na
Oh, Min-Jung
Yoon, Chang-Bun
Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
title Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
title_full Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
title_fullStr Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
title_full_unstemmed Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
title_short Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
title_sort effect of a zro(2) seed layer on an hf(0.5)zr(0.5)o(2) ferroelectric device fabricated via plasma enhanced atomic layer deposition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004304/
https://www.ncbi.nlm.nih.gov/pubmed/36903074
http://dx.doi.org/10.3390/ma16051959
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