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Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
In this study, a ferroelectric layer was formed on a ferroelectric device via plasma enhanced atomic layer deposition. The device used 50 nm thick TiN as upper and lower electrodes, and an Hf(0.5)Zr(0.5)O(2) (HZO) ferroelectric material was applied to fabricate a metal–ferroelectric–metal-type capac...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004304/ https://www.ncbi.nlm.nih.gov/pubmed/36903074 http://dx.doi.org/10.3390/ma16051959 |