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Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition

In this study, a ferroelectric layer was formed on a ferroelectric device via plasma enhanced atomic layer deposition. The device used 50 nm thick TiN as upper and lower electrodes, and an Hf(0.5)Zr(0.5)O(2) (HZO) ferroelectric material was applied to fabricate a metal–ferroelectric–metal-type capac...

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Detalles Bibliográficos
Autores principales:	Song, Ji-Na, Oh, Min-Jung, Yoon, Chang-Bun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004304/ https://www.ncbi.nlm.nih.gov/pubmed/36903074 http://dx.doi.org/10.3390/ma16051959

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