Cargando…
Interface Engineering Modulated Valley Polarization in MoS(2)/hBN Heterostructure
Layered transition metal dichalcogenides (TMDs) provide a favorable research platform for the advancement of spintronics and valleytronics because of their unique spin-valley coupling effect, which is attributed to the absence of inversion symmetry coupled with the presence of time-reversal symmetry...
Autores principales: | Li, Fang, Zhang, Hui, Li, You, Zhao, Yibin, Liu, Mingyan, Yang, Yunwei, Yao, Jiamin, Min, Shaolong, Kan, Erjun, Wan, Yi |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004763/ https://www.ncbi.nlm.nih.gov/pubmed/36903739 http://dx.doi.org/10.3390/nano13050861 |
Ejemplares similares
-
Correlated states in doubly-aligned hBN/graphene/hBN heterostructures
por: Sun, Xingdan, et al.
Publicado: (2021) -
Microscopic Mechanism of Van der Waals Heteroepitaxy
in the Formation of MoS(2)/hBN Vertical Heterostructures
por: Okada, Mitsuhiro, et al.
Publicado: (2020) -
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
por: Gurram, M., et al.
Publicado: (2017) -
New Generation of Moiré Superlattices in Doubly
Aligned hBN/Graphene/hBN Heterostructures
por: Wang, Lujun, et al.
Publicado: (2019) -
Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS(2) Transistors
por: Fiore, Sara, et al.
Publicado: (2022)