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Photogating Effect-Driven Photodetectors and Their Emerging Applications

Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interfa...

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Autores principales: Shin, Jihyun, Yoo, Hocheon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005329/
https://www.ncbi.nlm.nih.gov/pubmed/36903759
http://dx.doi.org/10.3390/nano13050882
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author Shin, Jihyun
Yoo, Hocheon
author_facet Shin, Jihyun
Yoo, Hocheon
author_sort Shin, Jihyun
collection PubMed
description Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect.
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spelling pubmed-100053292023-03-11 Photogating Effect-Driven Photodetectors and Their Emerging Applications Shin, Jihyun Yoo, Hocheon Nanomaterials (Basel) Review Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect. MDPI 2023-02-26 /pmc/articles/PMC10005329/ /pubmed/36903759 http://dx.doi.org/10.3390/nano13050882 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Shin, Jihyun
Yoo, Hocheon
Photogating Effect-Driven Photodetectors and Their Emerging Applications
title Photogating Effect-Driven Photodetectors and Their Emerging Applications
title_full Photogating Effect-Driven Photodetectors and Their Emerging Applications
title_fullStr Photogating Effect-Driven Photodetectors and Their Emerging Applications
title_full_unstemmed Photogating Effect-Driven Photodetectors and Their Emerging Applications
title_short Photogating Effect-Driven Photodetectors and Their Emerging Applications
title_sort photogating effect-driven photodetectors and their emerging applications
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005329/
https://www.ncbi.nlm.nih.gov/pubmed/36903759
http://dx.doi.org/10.3390/nano13050882
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