Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID)...

Descripción completa

Detalles Bibliográficos
Autores principales: Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Bae, Youngho, Jung, Hyun-Wook, Choi, Il-Gyu, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Kang, Dong-Min, Lim, Jong-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005350/
https://www.ncbi.nlm.nih.gov/pubmed/36903774
http://dx.doi.org/10.3390/nano13050898

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005350/
https://www.ncbi.nlm.nih.gov/pubmed/36903774
http://dx.doi.org/10.3390/nano13050898

Ejemplares similares