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Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID)...
Autores principales: | Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Bae, Youngho, Jung, Hyun-Wook, Choi, Il-Gyu, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Kang, Dong-Min, Lim, Jong-Won |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005350/ https://www.ncbi.nlm.nih.gov/pubmed/36903774 http://dx.doi.org/10.3390/nano13050898 |
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