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Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots

One-state and two-state lasing is investigated experimentally and through numerical simulation as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs quantum dots. Near room temperature, the temperature-induced increment of the ground-state threshold current densit...

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Autores principales: Makhov, Ivan, Ivanov, Konstantin, Moiseev, Eduard, Fominykh, Nikita, Dragunova, Anna, Kryzhanovskaya, Natalia, Zhukov, Alexey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005567/
https://www.ncbi.nlm.nih.gov/pubmed/36903756
http://dx.doi.org/10.3390/nano13050877
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author Makhov, Ivan
Ivanov, Konstantin
Moiseev, Eduard
Fominykh, Nikita
Dragunova, Anna
Kryzhanovskaya, Natalia
Zhukov, Alexey
author_facet Makhov, Ivan
Ivanov, Konstantin
Moiseev, Eduard
Fominykh, Nikita
Dragunova, Anna
Kryzhanovskaya, Natalia
Zhukov, Alexey
author_sort Makhov, Ivan
collection PubMed
description One-state and two-state lasing is investigated experimentally and through numerical simulation as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs quantum dots. Near room temperature, the temperature-induced increment of the ground-state threshold current density is relatively weak and can be described by a characteristic temperature of about 150 K. At elevated temperatures, a faster (super-exponential) increase in the threshold current density is observed. Meanwhile, the current density corresponding to the onset of two-state lasing was found to decrease with increasing temperature, so that the interval of current density of pure one-state lasing becomes narrower with the temperature increase. Above a certain critical temperature, ground-state lasing completely disappears. This critical temperature drops from 107 to 37 °C as the microdisk diameter decreases from 28 to 20 μm. In microdisks with a diameter of 9 μm, a temperature-induced jump in the lasing wavelength from the first excited-state to second excited-state optical transition is observed. A model describing the system of rate equations and free carrier absorption dependent on the reservoir population provides a satisfactory agreement with experimental results. The temperature and threshold current corresponding to the quenching of ground-state lasing can be well approximated by linear functions of saturated gain and output loss.
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spelling pubmed-100055672023-03-11 Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots Makhov, Ivan Ivanov, Konstantin Moiseev, Eduard Fominykh, Nikita Dragunova, Anna Kryzhanovskaya, Natalia Zhukov, Alexey Nanomaterials (Basel) Article One-state and two-state lasing is investigated experimentally and through numerical simulation as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs quantum dots. Near room temperature, the temperature-induced increment of the ground-state threshold current density is relatively weak and can be described by a characteristic temperature of about 150 K. At elevated temperatures, a faster (super-exponential) increase in the threshold current density is observed. Meanwhile, the current density corresponding to the onset of two-state lasing was found to decrease with increasing temperature, so that the interval of current density of pure one-state lasing becomes narrower with the temperature increase. Above a certain critical temperature, ground-state lasing completely disappears. This critical temperature drops from 107 to 37 °C as the microdisk diameter decreases from 28 to 20 μm. In microdisks with a diameter of 9 μm, a temperature-induced jump in the lasing wavelength from the first excited-state to second excited-state optical transition is observed. A model describing the system of rate equations and free carrier absorption dependent on the reservoir population provides a satisfactory agreement with experimental results. The temperature and threshold current corresponding to the quenching of ground-state lasing can be well approximated by linear functions of saturated gain and output loss. MDPI 2023-02-26 /pmc/articles/PMC10005567/ /pubmed/36903756 http://dx.doi.org/10.3390/nano13050877 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Makhov, Ivan
Ivanov, Konstantin
Moiseev, Eduard
Fominykh, Nikita
Dragunova, Anna
Kryzhanovskaya, Natalia
Zhukov, Alexey
Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
title Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
title_full Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
title_fullStr Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
title_full_unstemmed Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
title_short Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
title_sort temperature evolution of two-state lasing in microdisk lasers with inas/ingaas quantum dots
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005567/
https://www.ncbi.nlm.nih.gov/pubmed/36903756
http://dx.doi.org/10.3390/nano13050877
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